Engineering magnetism and thermal expansion in BiFeO3 for next-generation memory devices (Prof. Masaki Azuma, Assis. Prof. Takumi Nishikubo, Assis. Prof. Kei Shigematsu)

Using a dual-cation substitution approach, researchers at Science Tokyo introduced ferromagnetism into bismuth ferrite, a well-known and promising multiferroic material for next-generation memory technologies. By replacing ions at both the bismuth and iron sites with calcium ions and heavier elements, they modified the spin structure and achieved ferromagnetism at room temperature. Additionally, negative thermal expansion was observed. This ability to engineer magnetism and thermal expansion in a multiferroic material aids in realizing future memory devices.