Exploiting the full potential of multiferroic materials for magnetic memory devices (Assis.Prof. Kei Shigematsu, Sp.Appointed Assoc.Prof. Das Hena, Prof. Masaki Azuma)

Magnetization components perpendicular to an applied electric field can be reversed efficiently in multiferroic materials, as reported by researchers from Institute of Science Tokyo. This challenges their previous finding that the electric field and magnetization reversal must align. Using BiFe_0.9Co_0.1O₃ thin films with a specific crystallographic orientation, they demonstrated that a parallel electric field can induce perpendicular magnetization reversal, enabling more flexible designs of energy-efficient magnetic memory devices.

For details, please see Science Tokyo News.